the information contained in this document is being issued in advance of the production cycle for the product. the parameters for the product may change before final production or nec electronics corporation, at its own discretion, may withdraw the product prior to its production. not all products and/or types are availabe in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np110n055pug switching n-channel power mos fet preliminary product information document no. d16853ej1v0pm00 date published january 2004 cp(k) printed in japan description ordering information part number packag e np110n055pug to-263 ( mp-25zp ) t he np110n055pug is n-channel mos f i eld effect t r ansistor designed for high current sw itching applications. features ? channel temperature 175 degree rating ? super low on-state resistance r d s ( on) = 2.8 m ? max . (v gs = 10 v, i d = 55 a) (t o-263) ? low c iss : c iss = 16300 pf t yp. absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v ds s 5 5 v gate to source voltage (v ds = 0 v) v gss 2 0 v drain current (dc) (t c = 25c) i d(dc) 1 1 0 a drain current (pulse) note1 i d ( pul se) 4 4 0 a t o tal pow e r dissipation (t a = 25c) p t1 1 . 8 w t o tal pow e r dissipation (t c = 25c) p t2 2 8 8 w channel t e mperature t ch 1 7 5 c storage t e mperature t stg ?55 to + 175 c repetitive avalanche current note2 i ar t . b . d . a repetitive avalanche energy note2 e ar t . b . d . m j no tes 1. pw 10 s, duty cy cle 1% 2. starting t ch = 25c, v dd = 28 v, r g = 25 ? , v gs = 20 0 v thermal resistance channel to case t hermal resistance r th( c h- c) 0 . 5 2 c / w channel to ambient t hermal resistance r th( c h- a) 8 3 . 3 c / w 2004
np110n055pug electrical characteristics (t a = 25c) c h a r a c t e r i s t i c s s y mbol test c o n d i t i o n s m i n . ty p . max. unit zero gate voltage drain current i dss v ds = 55 v, v gs = 0 v 10 a gate leakage current i gs s v gs = 20 v, v ds = 0 v 100 na gate to source threshold voltage v gs (t h ) v ds = v gs , i d = 250 a 2.0 3.0 4.0 v forw ard transfer admittance | y fs | v ds = 10 v, i d = 55 a t.b.d. s drain to source on-state resistance r ds( on) v gs = 10 v, i d = 55 a 2.0 2.8 m ? input capacitance c is s 1 6 3 0 0 p f output capacitance c os s 1 4 0 0 p f reverse transfer capacitance c rss v ds = 25 v v gs = 0 v f = 1 mhz 8 0 0 p f turn-on del a y ti me t d( on) t . b . d . ns rise time t r t.b.d. n s turn-off del a y ti me t d( of f ) t.b.d. n s fal l ti me t f v dd = 28 v i d = 55 a v gs = 10 v r g = 0 ? t.b.d. n s total gate charge q g t.b.d. n c gate to source charge q gs t.b.d. n c gate to drain charge q gd v dd = 44v v gs = 10 v i d = 110 a t.b.d. n c body diode forw ard voltage v f(s - d) i f = 110 a, v gs = 0 v 1.0 1.5 v rever s e recover y t i me t rr t.b.d. n s reverse recovery charge q rr i f = 110 a, v gs = 0 v di/dt = 100 a/ s t.b.d. n c test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 ? 50 ? d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ? d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% preliminary product info rmation d16853ej1v0pm00 2
np110n055pug package drawing (unit: m m ) t o -263 (mp-25z p) note ; this dra w ing is te nta t iv e v e rs ion 10. 0?}0. 3 9. 15 ?} 0 .3 1.3 5 ?}0. 3 15. 25 ?}0.5 0.75?}0 . 2 2. 54 0.5 12 3 2. 5 1.3?}0.2 4.45?} 0. 2 0 . 6 ?} 0 . 2 0 t o 8 ?? 4 1. ga te 2. dr a i n 3. sour ce 4. fin (d r a in ) 2.54?}0.25 0.25 0. 02 5 to 0.25 equivalent circuit source body diode gate drain remark strong electric field, w hen exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. st eps must be taken to stop gener ation of static electricit y as much as possible, and quickly dissipate it once, w hen it has occurred. preliminary product info rmation d16853ej1v0pm00 3
np110n055pug the information contained in this document is being issued in advance of the production cycle for the product. the parameters for the product may change before final production or nec electronics corporation, at its own discretion, may withdraw the product prior to its production. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannnot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire- containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special", and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics products before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. i f customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m 5 0 2 . 11-1 (1) (2) "nec electronics" a s used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":
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